2sj332(l), 2sj332(s) silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter outline 1 2 3 1 2 3 4 4
dpak-2 1. gate
2. drain
3. source
4. drain d g s
2sj332(l), 2sj332(s) 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C20 v gate to source voltage v gss 20 v drain current i d C10 a drain peak current i d(pulse) * 1 C40 a body to drain diode reverse drain current i dr C10 a channel dissipation pch* 2 20 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. value at t c = 25c
2sj332(l), 2sj332(s) 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C20 v i d = C10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 a, v ds = 0 gate to source leak current i gss 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss C100 a v ds = C16 v, v gs = 0 gate to source cutoff voltage v gs(off) C1.0 C2.5 v i d = C1 ma, v ds = C10 v static drain to source on state r ds(on) 0.05 0.08 w i d = C5 a, v gs = C10 v* 1 resistance 0.09 0.14 w i d = C5 a, v gs = C4 v* 1 forward transfer admittance |y fs |69si d = C5 a, v ds = C10 v* 1 input capacitance ciss 730 pf v ds = C10 v, v gs = 0, f = 1 mhz output capacitance coss 680 pf reverse transfer capacitance crss 260 pf turn-on delay time t d(on) 13nsi d = C5 a, v gs = C10 v, r l = 2 w rise time t r 110 ns turn-off delay time t d(off) 90ns fall time t f 110 ns body to drain diode forward voltage v df C1.2v i f = C10 a, v gs = 0 body to drain diode reverse recovery time t rr 50si f = C10 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj332(l), 2sj332(s) 4 20
15
10
5 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating ?00 ?0 ?0 ? ? ?.3 ?.1 ?.1 ?.3 ? ? ?0 ?0 ?00 drain to source voltage v (v) ds drain current i (a) d 100 ? ta = 25 ? 10 ? 1 ms d.c operation
(tc = 25 ?) operation in this
area is limited
by r ds(on) pw = 10 ms
(1shot) maximum safe operation area ?0
?6
?2
?
? 0 2 4 6 8 ?0 drain to source voltage v (v) ds drain current i (a) d ?0 v ? v ?.5 v ? v v = ?.5 v gs ? v pulse test typical output characteristics
2sj332(l), 2sj332(s) 5 ?0
?6
?2
?
? 0 1 2 3 4 5 gate to source voltage v (v) gs drain current i (a) d 75 ?
tc = 25 ?
?5 ? v = ?0 v
pulse test ds typical tranfer characteristics ?.0
?.8
?.6
?.4
?.2 0 2 4 6 8 ?0 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) d i = ?0 a ? a ? a pulse test drain to source saturation voltage vs.
gate to source voltage 1 0.5 0.2 0.1 0.05 0.02 0.01 ?0 ?0 ?.5 ? ? ? ?0 drain current i (a) d drain to source on state resistance r ( ) w ds(on) pulse test ?0 v v = ? v gs static drain to source on state resistance
vs. drain current
2sj332(l), 2sj332(s) 6 0.20
0.16
0.12
0.08
0.04 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w ? a ?0 a ? a
? a v = ?0 v gs v = ? v gs i = ?0 a d ? a pulse test static drain to source on state resistance
vs. temperature 20 10 5 2 1 0.5 50 ?0 ?.2 ?.5 ? ? ? ?0 drain current i (a) d forward transfer admittance |y | (s) fs ?5 ? 75 ? tc = 25 ? v = ?0 v
pulse test ds forward transfer admittance vs.
drain current 5 10 500 200 100 50 20 ?.1 ?.2 ?.5 ?.0 ? ? ?0 reverse drain current i (a) dr reverse recovery time trr (ns) di / dt = 20 a / ?
v = 0, pulse test gs body?rain diode reverse
recovery time
2sj332(l), 2sj332(s) 7 10000 1000 100 10 0 4 8 ?2 ?6 ?0 capacitance c (pf) drain to source voltage v (v) ds ciss coss crss v = 0
f = 1 mhz gs typical capacitance vs.
drain to source voltage 0
?0
?0
?0
?0 0 8 ?6 ?4 ?2 ?0 gate charge qg (nc) drain to source voltage v (v) ds 0
?
?
?2
?6 ?0 ?0 gate to source voltage v (v) gs v = ? v
?0 v
?0 v dd v = ? v
?0 v
?0 v dd ds v gs v i = ?0 a d dynamic input characteristics 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 drain current i (a) d switching time t (ns) t f r t d(off) t d(on) t switching characteristics v = ?0 v, v = ?0 v
pw = 2 ?, duty < 1 % gs dd
2sj332(l), 2sj332(s) 8 ?0 ?6 ?2 ? ? 0 ?.4 ?.8 ?.2 ?.6 ?0 source to drain voltage v (v) sd pulse test ?0 v ? v v = 0, 5 v gs reverse drain current i (a) dr reverse drain current vs. source to drain voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 6.25 ?/w, tc = 25 ? q g q
q d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin
-10 v r l v
= 10 v . . dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout
monitor 50 w 90% 10% t f switching time test circuit waveforms
2sj332(l), 2sj332(s) 9 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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